| 摘要 |
<p>The present invention pertains to techniques for producing semiconductor materials and can be used for growing silicon monocrystals according to the Chokhalsky method. This invention essentially relates to a method for producing monocrystalline silicon, wherein said method involves melting down the starting silicon in a crucible, introducing seeds and drawing the crystal from the melt on a rotating seed. The method is carried in an inert gas atmosphere, the rotation directions of the crucible and the crystal coincide and the ratio between the crucible and the crystal rotation speeds is defined by the formula (I) in which φcru and φcry are the rotation speeds of the crucible and of the crystal in rev./min respectively, k is a number from 0.1 to 0.5, Dint is the internal diameter of the quartz crucible in mm, dnom is the nominal diameter of the monocrystal to be grown in mm, hm is the initial depth of the melt in the crucible in mm, Hh is the length of the heating part of the heater in mm, and η is the positioning coefficient that takes into account the position of the crucible with the melt in the cavity of the heater as well as the structure of the thermal unit. This coefficient ranges from 0.5 to 3.0 and is previously determined in an experimental manner.</p> |
