| 摘要 |
<p>A method for treating a film of material (2101), which can be defined on a substrate, e.g. silicon. The method includes providing a substrate (2201) comprising a cleaved surface (2404) over an oxide surface or interface (2305), which is characterized by a predetermined surface roughness value. The substrate also has a distribution of hydrogen bearing particles defined from the cleaved surface (2404). The method also includes increasing a temperature of the cleaved surface (2404) to greater than about 1,000 °C while maintaining the cleaved surface (2404) in an etchant bearing environment (2401) to reduce the predetermined surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.</p> |
