MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device of high operational performance and high reliability, and a method of manufacturing the same. SOLUTION: A TFT structure, that is durable against degradation due to hot carrier injection, is realized by arranging an Lov region 207 in an n-channel TFT 302, which constitutes a drive circuit part. A TFT structure of a low off-current value is realized by arranging Loff regions 217-220 in an n-channel TFT 304, which constitutes a pixel part. Here, an n-type impurity element exists at a higher concentration in a Lov region than in a Loff regions. Because whole of the n-type impurity region that constitutes the Lov region is optically annealed to be adequately activated, a satisfactory junction is formed between it and a channel-forming region.