| 摘要 |
<p>A power MOSFET is provided that includes a substrate (2) of a first conductivity type. An epitaxial layer (1) also of the first conductivity type is deposited on the substrate. First and second body regions (5a, 6a, 5b, 6b) are located in the epitaxial layer and define a drift region between them. The body regions have a second conductivity type. First and second source regions (7, 8) of the first conductivity type are respectively located in the first and second body regions. A plurality of trenches (44, 46) are located below the body regions in the drift region of the epitaxial layer. The trenches, which extend toward the substrate from the first and second body regions, are filled with a material that includes a dopant of the second conductivity type. The dopant is diffused from the trenches into portions of the epitaxial layer adjacent the trenches so as to form semiconductor regions (40, 42) of the second conductivity type under the body regions.</p> |
