| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferromagnetic tunnel junction type magnetic head which makes it possible to obtain a high MR(magneto-resistive) change rate with good reproducibility. SOLUTION: A first magnetic shielding film 51 and a second magnetic shielding film 52 are arranged apart insulation spacings 24 and 25 from each other on a slider. A magnetic conversion element includes a ferromagnetic tunnel junction part 21. The ferromagnetic tunnel junction part 21 is formed by laminating a first ferromagnetic film 211 and a second ferromagnetic film 212 via an insulating film 210 and is arranged between the first magnetic shielding film 51 and the second magnetic shielding film 52. The barrier potential by the insulating film 210 of the ferromagnetic tunnel junction part 21 ranges from 0.5 to 3 eV. |
