发明名称 |
METHOD AND APPARATUS FOR FORMING IN-LAID CAPACITOR ON SEMICONDUCTOR WAFER |
摘要 |
PROBLEM TO BE SOLVED: To eliminate residues included within the cavity of a semiconductor wafer by conducting megasonic cleaning of semiconductor wafer and brush scrub after polishing the layers formed within a cavity and on the upper surface of the semiconductor wafer. SOLUTION: After chemical and mechanical polishing of the layers formed within a cavity and on the upper surface of semiconductor wafer with a chemical mechanical polisher 38 is conducted, the semiconductor wafer is introduced into a cleaning system 40 passing through the entrance for the purpose of megasonic cleaning. Thereafter, a semiconductor wafer is automatically transferred to a first bush scrub station 46 for the brush scrub. Thereafter, the wafer is then transferred to a second brush scrub station 48. The semiconductor wafer is transferred to a spin dry station from the station 50 from the station 48. After the wafer is dried the wafer is then taken out from the cleaning system 40. |
申请公布号 |
JP2000353680(A) |
申请公布日期 |
2000.12.19 |
申请号 |
JP20000130960 |
申请日期 |
2000.04.28 |
申请人 |
APPLIED MATERIALS INC |
发明人 |
AMICO GREGORY M;DAVENPORT ROBERT E |
分类号 |
B24B37/04;H01L21/02;H01L21/304;H01L21/306;H01L21/321;H01L21/8242;H01L27/108;(IPC1-7):H01L21/304;H01L21/824 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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