发明名称 METHOD AND APPARATUS FOR FORMING IN-LAID CAPACITOR ON SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To eliminate residues included within the cavity of a semiconductor wafer by conducting megasonic cleaning of semiconductor wafer and brush scrub after polishing the layers formed within a cavity and on the upper surface of the semiconductor wafer. SOLUTION: After chemical and mechanical polishing of the layers formed within a cavity and on the upper surface of semiconductor wafer with a chemical mechanical polisher 38 is conducted, the semiconductor wafer is introduced into a cleaning system 40 passing through the entrance for the purpose of megasonic cleaning. Thereafter, a semiconductor wafer is automatically transferred to a first bush scrub station 46 for the brush scrub. Thereafter, the wafer is then transferred to a second brush scrub station 48. The semiconductor wafer is transferred to a spin dry station from the station 50 from the station 48. After the wafer is dried the wafer is then taken out from the cleaning system 40.
申请公布号 JP2000353680(A) 申请公布日期 2000.12.19
申请号 JP20000130960 申请日期 2000.04.28
申请人 APPLIED MATERIALS INC 发明人 AMICO GREGORY M;DAVENPORT ROBERT E
分类号 B24B37/04;H01L21/02;H01L21/304;H01L21/306;H01L21/321;H01L21/8242;H01L27/108;(IPC1-7):H01L21/304;H01L21/824 主分类号 B24B37/04
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