| 摘要 |
PURPOSE: A method for manufacturing a semiconductor memory device for preventing a contact between a diffusion blocking layer and a dielectric layer is provided to form a capacitor having a superior dielectric characteristic, by minimizing a contact between the diffusion blocking layer and the dielectric layer. CONSTITUTION: An oxidation layer(21) is formed on a semiconductor substrate(20). The oxidation layer is selectively etched to form a contact hole. A polysilicon plug(22) filling the inside of the contact hole is formed. A part of the polysilicon plug is wet-etched by a mixture solution of NH4OH and H2O. A Ti silicide layer(23) is formed on the polysilicon plug. A TiN layer(24) is formed on the resultant structure. The TiN layer is polished until the oxidation layer is exposed, to leave the TiN layer in the contact hole on the polysilicon plug. A storage electrode covering the oxidation layer and TiN layer is formed. A dielectric layer(26) and a plate electrode(27) are formed on the storage electrode.
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