SILICON POLYMER INSULATING LAYER OF SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A silicon polymer insulating layer of a semiconductor substrate and a method for forming the same are provided to form silicon polymer layer with a low relative dielectric constant without using a high-priced system. CONSTITUTION: A semiconductor substrate(4) is loaded within a reaction room(6) of a plasma CVD(Chemical Vapor Deposition) system(1). A material gas including a silicon hydrocarbon compound is provided into the reaction room(6). A silicon polymer layer with a low relative dielectric constant is formed on the semiconductor substrate(4) by activating a plasma polymerization reaction within the reaction room(6). A flow rate of a reaction gas including the material gas is controlled to extend the remaining time of the material gas.