TUNNELING MAGNETO-RESISTANCE EFFECT TYPE HEAD

摘要

PROBLEM TO BE SOLVED: To easily realize a higher recording density by designing a single electrodeshielding layer so as to extend from an Air Bearing Surface(ABS) toward a rear portion of a tunneling multi-layered film while turning therearound in order to improve a readout output. SOLUTION: A tunneling multi-layered film 3 includes a multi-layered structure in which a ferromagnetic free layer 20 and a ferromagnetic pinned layer 40 are formed so as to interpose a tunneling barrier layer 30 therebetween. The ferromagnetic free layer 20 functions so as to freely change its magnetization directions in response to an external magnetic field that is magnetic information. The ferromagnetic pinned layer 40 is pinned such that all of its magnetization directions are aligned in one direction, and layered on one surface of the ferromagnetic pinned layer 40 that is opposite to the surface thereof contacting the tunneling barrier layer 30. Since an multi-layered film detecting end surface forms an ABS in the tunneling multi-layered film 3, a loss in tunneling effect can be reduced.