METHOD FOR FORMING SILICON LAYER HAVING HEMISPHERICAL GRAIN

摘要

PURPOSE: A fabrication method of a silicon layer is provided to enhance a reliability of a device by maintaining a constant capacitance of a capacitor regardless of a number of times of a process proceeding to form a silicon layer having a hemispherical grain. CONSTITUTION: A silicon layer having a hemispherical grain is formed repetitively on a wafer(41) at a reaction chamber(40) including a heater(42). A temperature of the heater is corrected by periods to maintain a constant temperature in spite of proceeding of a number of times of the process for forming the silicon layer having the hemispherical grain. A wafer is loaded to the reaction chamber to form the silicon layer having the hemispherical grain. A seed layer of the silicon layer having the hemispherical grain is formed on the wafer. The wafer is annealed, thereby forming the silicon layer having the hemispherical grain. After unloading the wafer from the reaction chamber, a test wafer is loaded into the reaction chamber. The temperature of the test wafer is increased according to a process condition for forming the silicon layer and then the temperature of the test wafer is measured. The test wafer is unloaded from the reaction chamber. The temperature of the heater is adjusted based on the measured temperature value.