| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a precise and uniform nozzle plate by etching a boron layer of a high concentration as an etching block layer. SOLUTION: A silicon oxide film is formed in a thickness of 0.5-3μm to one side face of a silicon substrate 10. The silicon oxide film is patterned in a pattern of a nozzle plate to be formed. Then the silicon substrate 10 is etched with the use of an anisotropic etching solution. Thereafter, a boron of a high concentration (approximately 7×1019 atoms/cm3) is injected to a face of the silicon substrate 10, thereby forming boron layers 14 and 16. The silicon substrate 10 is etched again to remove the silicon substrate at the opposite side by several tensμm. At this time, the face where the boron layers 14 and 16 are formed is not etched. When the silicon substrate 10 becomes a desired thickness, the silicon oxide film 12 is selectively etched and removed. The boron layer formed to an upper part of the silicon oxide film 12 is also removed. The nozzle plate is completed in this manner.
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