发明名称 SEMICONDUCTOR MANUFACTURE DEVICE, WAFER CLEANING METHOD USING THE SAME AND CMP TREATMENT METHOD
摘要 <p>PROBLEM TO BE SOLVED: To easily generate hydroplaining phenomenon and improve substitution efficiency of slurry by rotating a brush wherein a groove is formed in a bottom at a high speed. SOLUTION: In a brush 16, a groove 20 is formed in a brush bottom 19 of a contact surface between the brush 16 and a wafer 11. The groove 20 of the brush 16 is formed in the direction to take in water on the wafer 11 and the groove 20 is wide in a peripheral part and is narrow as it gets closer to a central part. A round groove is shaped in a groove central part 21. Therefore, particle depositing on the wafer 11 is removed as the brush 16 scans the wafer 11. During scanning, the brush 16 is subjected to a high speed rotation (at least hundreds of turns/minute) to make pure water enter the brush bottom 19 by means of the brush 16 and the groove 20. As a result, the brush bottom 19 becomes positive pressure and the brush 16 rises.</p>
申请公布号 JP2001035825(A) 申请公布日期 2001.02.09
申请号 JP19990205878 申请日期 1999.07.21
申请人 MIYAGI OKI ELECTRIC CO LTD;OKI ELECTRIC IND CO LTD 发明人 SUZUKI HIDEAKI
分类号 B08B1/04;B24B37/00;H01L21/304;(IPC1-7):H01L21/304 主分类号 B08B1/04
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