THIN FILM TRANSISTOR PANEL AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor panel and a manufacturing method thereof permitting good connections. SOLUTION: This TFT panel is completed by patterning a protective insulating film 17 by means of the photo-lithography method, and forming contact hole 17a corresponding to a source electrode S of TFT 30 and apertures 17b, 17c corresponding to data line terminal area DLa, and gate line terminal area GLa, and forming an aperture 12a corresponding to the above-mentioned gate line terminal area GLa also to a gate insulating film 12, and patterning a transparent conductive film 18 in the form of the upper layer film of a pixel electrode 20, a data line terminal area DLa, and a gate line terminal area GLa by means of the photo-lithography method after depositing the transparent conductive film 18 like an ITO film, etc.