发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE |
摘要 |
<p>PROBLEM TO BE SOLVED: To embody a technique of forming pixel regions of a high aperture ratio by providing a method for forming holding capacitors with a liquid crystal display device of an IPS system. SOLUTION: The surfaces of common electrodes 103 formed on insulating films, more particularly resin films, used for the respective circuits of an electro- optic device as represented by an LCD consisting of the IPS system are covered with anodically oxidized films by executing an anodic oxidation stage at >=11 V/min in impressed voltage/power feed time, by which the infiltrating amount may be decreased and the liquid crystal display device having the electrodes of an excellent adhesion property and having high reliability may be manufactured.</p> |
申请公布号 |
JP2001033824(A) |
申请公布日期 |
2001.02.09 |
申请号 |
JP20000145899 |
申请日期 |
2000.05.18 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;HIRAKATA YOSHIHARU;MURAKAMI TOMOHITO |
分类号 |
G02F1/1339;G02F1/1343;G02F1/136;G02F1/1368;G09F9/30;H01L21/336;H01L29/786;(IPC1-7):G02F1/136;G02F1/133;G02F1/134 |
主分类号 |
G02F1/1339 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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