| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-breakdown-voltage semiconductor chip whose yield is en hanced after a product is assembled and whose production cost can be reduced by evaluating the characteristic of the high-breakdown-voltage semiconductor chip in a state that an elastic insulator is pressed and that a high voltage is applied. SOLUTION: A silicone rubber 8 is pressed to the termination part 9 of a high- breakdown-voltage semiconductor chip 6 in a bare state. As a result, a spark path from the side face of the chip 6 to an emitter electrode 13E can be cut off by the silicone rubber 8. Since the spark path is cut off, it is possible to suppress the generation of a spark even when a high voltage, e.g. at 200 V or higher, concretely at 4000 to 4500 V, is applied. As a result, the spark is hard to fly from the side face part of the high-breakdown-voltage semiconductor chip 6 up to the surface part of the chip, or between the high-breakdown-voltage semiconductor chip and a bonding wire which connects the chip to a board 1. Consequently, before a product is assembled, a semiconductor electronic apparatus board can be evaluated under a high-voltage environment, e.g. at 2,000 V or higher. |
