| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantum arithmetic element of a structure, where electrons can be restrained in the vicinities of donor atomic nucleus, without having to put the electrons in a cryogenic state, and manufacturing of the element is made easy. SOLUTION: Silicon single-crystal fine grains 24 to 27 are arranged on a silicon substrate 21 at almost equal intervals via a silicon oxide film 22, and phosphorus atoms 32 to 35 are respectively contained in each of the fine grains 24 to 27 as a donor atom. In this way, by making small the radius of each of the fine grains 24 to 27 into a radius of 5 nm or thereabouts, the electrons ca be restrained in the vicinities of donor atomic nucleus, without putting the electrons in a cryogenic state. Moreover, as the position of each cell, which is constituted of each of the fine grains 24 to 27 is decided in a mechanical form, each of metallic electrodes 28 to 31 can be easily formed on each of the donor atoms 32 to 35 using a conventional photolithography technique and a self-matching technique. In turn, a quantum arithemetic element itself can be easily manufactured. |
