| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a top gate stagger-type thin film transistor(TFT) which is simple in structure and capable of decreasing a leakage current. SOLUTION: A semiconductor layer 100, insulating layers 106 and 106A, and a gate electrode 107 are successively formed on a source electrode 102 and a drain electrode 103 arranged on a substrate 101, where the semiconductor layer 100 is a laminated structure composed of an amorphous silicon layer 104 and a polycrystalline silicon layer 105 formed on the silicon layer 104. Furthermore, the amorphous silicon layer 104 is specified in thickness to the polycrystalline silicon layer 105.</p> |
