发明名称 MANUFACTURING METHOD SURFACE OF PROTECTIVE SHEET AT POLISHING OF REAR OF WAFER, AND SEMICONDUCTOR CHIP
摘要 PROBLEM TO BE SOLVED: To provide a surface protective sheet which can manufacture a semiconductor chip efficiently by enabling the worker to recognize the semiconductor chip without fail. SOLUTION: This surface protective sheet for the time of polishing of the rear of a semiconductor wafer is one which is used for polishing of the rear of the wafer and by which the thickness of the wafer is thinned by forming a groove with a depth shallower than the thickness of the wafer from the surface of the wafer where a semiconductor circuit is made, and grinding the rear of the semiconductor wafer after that, and also finally it is divided into individual chips, and this protective sheet comprises base material and an adhesive layer made thereon, and in the tension test of that surface protective sheet, the stress relaxation percentage at tension of 10% is 40% or over after one minute.
申请公布号 JP2001127029(A) 申请公布日期 2001.05.11
申请号 JP19990305673 申请日期 1999.10.27
申请人 LINTEC CORP;TOSHIBA CORP 发明人 KONDO TAKESHI;TAKAHASHI KAZUHIRO;EBE KAZUYOSHI
分类号 H01L21/304;H01L21/301;(IPC1-7):H01L21/304 主分类号 H01L21/304
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