| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent a soldering failure from occurring between a lead frame of Cu or Cu alloy and a semiconductor element so as to improve a semiconductor device in yield. SOLUTION: In a method for manufacturing a semiconductor device in which a semiconductor element is soldered on the surface of a lead frame of Cu or Cu alloy, the thickness of an oxide film on the surface of the lead frame is measured before a soldering process, and when the oxide film is not as thick as required, the lead frame is heated in a reducing atmosphere so as to make an oxide film located on its surface as thick as required, and then a soldering operation is carried out when the oxide film gets as thick as required.</p> |
