发明名称 |
METHOD FOR GROWING SiC MONOCRYSTALS |
摘要 |
A method is described for growing at least one silicon carbide (SiC) single crystal by sublimation of a SiC source material. Silicon, carbon and a SiC seed crystal are introduced into a growing chamber. Then, the SiC source material is produced from the silicon and the carbon in a synthesis step that takes place before the actual growing. The growing of the SiC single crystal is then carried out immediately after the synthesis step. The carbon used is a C powder with a mean grain diameter of greater than 10 mum. |
申请公布号 |
EP1105555(A1) |
申请公布日期 |
2001.06.13 |
申请号 |
EP19990942774 |
申请日期 |
1999.07.01 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
STEIN, RENE;KUHN, HARALD;VOELKL, JOHANNES |
分类号 |
C30B29/36;C30B23/00 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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