| 摘要 |
A frame region (100f) of this display device (100) comprises a seal part (60s) and a transition part (60t) that electrically connects an active matrix substrate (10) and a counter substrate (30) with each other by means of conductive particles (62). A drive TFT (11A) provided in the frame region comprises a semiconductor layer (15), a first gate electrode (12gA), a source electrode (14sA), a drain electrode (14dA) and a second gate electrode (16gA) that is positioned opposite to the first gate electrode with respect to the semiconductor layer. In a display region (100d), the active matrix substrate has a projection structure that protrudes toward the counter substrate. In the frame region, the active matrix substrate has an insulating member (19) that is provided on the drive TFT and covers the second gate electrode. The insulating member is formed of the same dielectric film as the projection structure. |
