发明名称 SUBSTRATE HOLDING FITTING FOR HEAT TREATMENT, SUBSTRATE HEAT TREATMENT APPARATUS, AND METHOD FOR THERMALLY TREATING SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To manufacture a vertical boat for heat treatment which can avoid generation of a surface defect called a slip in heat treatment steps of semiconductor substrate (silicon wafer) oxidization, CVD, annealing, etc. SOLUTION: A vertical heat treatment boat 1 is obtained by polishing a silicon wafer support part to a grain particle roughness of #800 or more, chamfering and then annealing it. Or two or more smooth projections are provided to the support part. Further, the vertical heat treatment boat is manufactured vertically symmetrically.</p>
申请公布号 JP2001168175(A) 申请公布日期 2001.06.22
申请号 JP19990347839 申请日期 1999.12.07
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC;OMIYA KASEI KK 发明人 MINAMI SHINJI;KATSURADA IKUO
分类号 H01L21/683;H01L21/324;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/683
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