发明名称 |
SUBSTRATE HOLDING FITTING FOR HEAT TREATMENT, SUBSTRATE HEAT TREATMENT APPARATUS, AND METHOD FOR THERMALLY TREATING SUBSTRATE |
摘要 |
<p>PROBLEM TO BE SOLVED: To manufacture a vertical boat for heat treatment which can avoid generation of a surface defect called a slip in heat treatment steps of semiconductor substrate (silicon wafer) oxidization, CVD, annealing, etc. SOLUTION: A vertical heat treatment boat 1 is obtained by polishing a silicon wafer support part to a grain particle roughness of #800 or more, chamfering and then annealing it. Or two or more smooth projections are provided to the support part. Further, the vertical heat treatment boat is manufactured vertically symmetrically.</p> |
申请公布号 |
JP2001168175(A) |
申请公布日期 |
2001.06.22 |
申请号 |
JP19990347839 |
申请日期 |
1999.12.07 |
申请人 |
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC;OMIYA KASEI KK |
发明人 |
MINAMI SHINJI;KATSURADA IKUO |
分类号 |
H01L21/683;H01L21/324;H01L21/68;(IPC1-7):H01L21/68 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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