| 摘要 |
PURPOSE: A semiconductor memory device and a fabrication method thereof are provided to permit an increase in capacitance by enlarging a surface area of a floating gate while attaining high integration. CONSTITUTION: The device includes a semiconductor substrate(20), a trench formed in the substrate(20), an insulating layer(23) for device isolation formed to fill the trench and also protrude over the substrate(20), the floating gate(25) formed on a portion of the substrate(20) and partly extended over the insulating layer(23), an interlayer dielectric layer(26) formed on the floating gate(25), and a control gate(27) formed on the interlayer dielectric layer(26). In particular, since the floating gate(25) has a stepped profile due to the insulating layer(23) protruding over the substrate(23), the surface area of the floating gate(25) is increased.
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