| 摘要 |
PURPOSE: A current sense amplifier of a semiconductor memory device is provided to reduce of a current consumption by limiting the amount of a current supplied to a sensing line with a simple circuit configuration. CONSTITUTION: A cell current control circuit(30) comprises a PMOS transistor(P20) and NMOS transistors(N20,N21), and a current mirror(32) comprises PMOS transistors(P21,P22,P23) and an NMOS transistor(N25). And a current mirror(34) comprises a PMOS transistor(P23) and NMOS transistors(N23,N24). A reference current control circuit(36) comprises a PMOS transistor(P25) and NMOS transistors(N26,N27). The amplifier also comprises an NMOS transistor(N22) and inverters(I3,I4). A voltage(VPP) applied to a dummy floating gate memory cell is a word line voltage level higher than a power supply voltage(VCC). The cell current control circuit changes a conductance of the PMOS transistor(P23) and the NMOS transistor(N22). The PMOS transistor induces a voltage between the current mirror(34) and a sensing line(24), and changes the conductance properly to the current intensity of the current mirror(34).
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