| 摘要 |
PURPOSE: A method of making a PBSOI wafer is provided to utilize an epitaxy lateral overgrowth(ELO) process capable of obtaining a semiconductor layer of a uniform thickness. CONSTITUTION: The first silicon substrate on the lateral surface of which uniformly formed oxide patterns(2a) are formed is prepared. The first single crystal silicon layer(3) is formed on the first silicon substrate and the oxide patterns. The first grooves(5) are formed by etching the first single crystal silicon layer so as to expose the first silicon substrate. The first oxide film is formed so as to bury the first grooves. The second single crystal silicon layer(7) is formed on the first single crystal silicon layer and the first oxide film. A device isolation film is formed on the second single crystal silicon layer. The second oxide film is formed on the second single crystal silicon layer and the device isolation film. The third groove is formed by patterning the second oxide film so as to expose the second single crystal silicon layer. A capacitor(12) is formed on the second oxide film so as to be connected with the second single crystal silicon layer through the third groove. The third oxide film(6) is formed on the second oxide film so as to cover the capacitor. The first silicon substrate is bonded with the second silicon substrate(14). The first silicon substrate, the oxide film pattern, the first oxide film, and the first single crystal silicon layer are sequentially removed.
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