METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve reliability and yield, by effectively eliminating polymer, and by preventing a lower electrode from being desorbed in a cleaning process. CONSTITUTION: A metallic material is used as a source material of upper and lower electrodes(34,32) in a process for forming a capacitor. A dry-etching process exposing the metallic material is performed by using a predetermined photoresist layer pattern. An RF plasma treatment is performed to eliminate polymer generated in the dry-etching process by using gas including at least F and O.