| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a substrate-retaining apparatus for fully suppressing heat transfer gas from leaking out of the gap between a substrate and a chuck into a vacuum chamber. SOLUTION: A wafer treatment apparatus 10 is provided with a flow rate controller 24 for controlling the amount of He gas to be introduced to a passage 18 of a chuck 11, and a flow rate controller 25 for controlling the amount of He gas to be unloaded from the passage 18. When the state of a surface 17B to be attracted of a wafer 17 is poor, the amount of unloaded He gas from the passage 18 is increased by the flow rate controller 25, so that the inside of a chamber 12, where the vacuum level once deteriorated is restored to high vacuum.</p> |
