发明名称 Self-light-emitting device and method of manufacturing the same
摘要 Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.
申请公布号 US2001019133(A1) 申请公布日期 2001.09.06
申请号 US20010782239 申请日期 2001.02.13
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KONUMA TOSHIMITSU;MARUYAMA JUNYA
分类号 H05B33/00;H01L27/32;H01L51/00;H01L51/30;H01L51/40;H01L51/52;(IPC1-7):H01L35/24;H01L27/15;H01L31/12;H01L33/00 主分类号 H05B33/00
代理机构 代理人
主权项
地址