METHOD FOR PRODUCING SILICON EPITAXIAL WAFER AND SILICON EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To effectively prevent the occurrence of a rough surface which is formed in an annular form at the peripheral part of the main surface of an epitaxial wafer when a silicon epitaxial wafer whose main surface is 110} face is produced. SOLUTION: In a method of producing a silicon epitaxial wafer which comprises growing, in a gas phase, a silicon epitaxial layer on a main surface of a silicon single crystal substrate whose face orientation is roughly 110}, the silicon epitaxial layer is grown so that the surface roughness at the peripheral part of the main surface of the silicon epitaxial wafer is <=1.1 times of the surface roughness at the central part by using a silicon single crystal in which the off-angel of the main surface is >=0.5 deg. and <=7 deg. from 110} as the silicon single crystal substrate.