Semiconductor device

摘要

A semiconductor device comprising:
a first, a second and a third conductive layer;the second conductive layer being located between the first and third conductive layers;wherein respective regions of the first and second conductive layers form a first capacitor; andrespective regions of the second and third conductive layers form a second capacitor.

主权项

1. A capacitor device comprising:
a first, a second and a third layer, each layer comprising a first discrete portion of conductive material located in a first region and a second discrete portion of conductive material located in a second region; wherein in the first region, the discrete portions of the second and third layers are in electrical communication with each other, and the discrete portions of the first and second layers are electrically isolated from each other, the discrete portions of the first and second layers forming a first capacitor; and wherein in the second region, the discrete portions of the first and second layers are in electrical communication with each other, and the discrete portions of the second and third layers are electrically isolated from each other, the discrete portions of the second and third layers forming a second capacitor.