Integrated circuits with electrical fuses and methods of forming the same

摘要

A method of forming an integrated circuit includes forming at least one transistor over a substrate. Forming the at least one transistor includes forming a gate dielectric structure over a substrate. A work-function metallic layer is formed over the gate dielectric structure. A conductive layer is formed over the work-function metallic layer. A source/drain (S/D) region is formed adjacent to each sidewall of the gate dielectric structure. At least one electrical fuse is formed over the substrate. Forming the at least one electrical fuse includes forming a first semiconductor layer over the substrate. A first silicide layer is formed on the first semiconductor layer.

主权项

1. A method of forming an integrated circuit, the method comprising:
forming at least one transistor over a substrate, wherein forming the at least one transistor comprises:
forming a gate dielectric structure over a substrate;forming a work-function metallic layer over the gate dielectric structure;forming a conductive layer over the work-function metallic layer; andforming a source/drain (S/D) region being disposed adjacent to each sidewall of the gate dielectric structure;forming a diffusion barrier layer between the gate dielectric structure and the work-function layer; and forming at least one electrical fuse over the substrate, wherein forming the at least one electrical fuse comprises:
forming a first semiconductor layer over the substrate; andforming a first silicide layer on the first semiconductor layer, wherein the diffusion barrier layer is formed subsequent to the first silicide layer.