BOOSTING CIRCUIT AND SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a word line boosting circuit of which boosting voltage is adjusted in a range of the upper limit value and the lower limit value of distribution of threshold voltage of a semiconductor non-volatile memory element independently of a value of power source voltage. SOLUTION: The number of parallel connection of capacitors provided respectively by plural boosting stages being connected directly in a drain side boosting circuit VCa are varied in accordance with a value of power source voltage Vcc. In detection of power source voltage Vcc, resistance-divided voltage values are detected by comparators OP1-OP3. And operation signals S1a-S3a are generated by a decoder DCa depending on combination of output of the comparators OP1-OP3, and it is decided which capacitors are connected parallel.