发明名称 FIELD EMISSION ELECTRON SOURCE AND ITS INSPECTING METHOD AND DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a high performance field emission electron source and a method and a device for simply deciding the quality of the field emission electron source. SOLUTION: Electrons injected into an intense electric field drift layer 6 are accelerated and drifted without colliding with silicon microcrystals 63 by the electric field applied to silicon oxide films 64 and are emitted through a surface electrode 7. Performance of photoluminescence measurement by light excitation of the intense electric field drift layer 6 detects peaks of emission from the silicon microcrystals 63. In a defective article with small emission current, peaks of emission from the silicon microcrystals 63 are not detected.</p>
申请公布号 JP2001273850(A) 申请公布日期 2001.10.05
申请号 JP20000085837 申请日期 2000.03.27
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 KUNUGIBARA TSUTOMU;KOMODA TAKUYA;AIZAWA KOICHI;KOSHIDA NOBUYOSHI
分类号 H01J9/42;G01N21/63;H01J1/30;H01J1/312;H01J9/02;(IPC1-7):H01J1/312 主分类号 H01J9/42
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