发明名称 |
FIELD EMISSION ELECTRON SOURCE AND ITS INSPECTING METHOD AND DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high performance field emission electron source and a method and a device for simply deciding the quality of the field emission electron source. SOLUTION: Electrons injected into an intense electric field drift layer 6 are accelerated and drifted without colliding with silicon microcrystals 63 by the electric field applied to silicon oxide films 64 and are emitted through a surface electrode 7. Performance of photoluminescence measurement by light excitation of the intense electric field drift layer 6 detects peaks of emission from the silicon microcrystals 63. In a defective article with small emission current, peaks of emission from the silicon microcrystals 63 are not detected.</p> |
申请公布号 |
JP2001273850(A) |
申请公布日期 |
2001.10.05 |
申请号 |
JP20000085837 |
申请日期 |
2000.03.27 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD |
发明人 |
KUNUGIBARA TSUTOMU;KOMODA TAKUYA;AIZAWA KOICHI;KOSHIDA NOBUYOSHI |
分类号 |
H01J9/42;G01N21/63;H01J1/30;H01J1/312;H01J9/02;(IPC1-7):H01J1/312 |
主分类号 |
H01J9/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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