| 发明名称 | Nitride-based semiconductor light-emitting device | ||
| 摘要 | A nitride-based semiconductor light-emitting device includes a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region interposed the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; and an un-doped AlGaN layer formed between the first semiconductor structure and the semiconductor buffer structure. | ||
| 申请公布号 | US9524869(B2) | 申请公布日期 | 2016.12.20 |
| 申请号 | US201414154149 | 申请日期 | 2014.01.13 |
| 申请人 | Epistar Corporation | 发明人 | Lin Wen Hsiang;Hsieh Chang-Hua |
| 分类号 | H01L29/06;H01L21/02;H01L33/00;H01L33/12 | 主分类号 | H01L29/06 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A nitride-based semiconductor light-emitting device, comprising: a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region between the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; and an un-doped AlGaN layer formed between the first semiconductor structure and the semiconductor buffer structure, wherein the un-doped AlGaN layer comprises a thickness between 40 and 600 angstrom. | ||
| 地址 | Hsinchu TW | ||