Method for cleaning and drying semiconductor substrate

摘要

The present invention provides a method for cleaning and drying a semiconductor substrate in which a semiconductor substrate onto which a pattern has been formed is cleaned and dried, which comprises steps of (1) cleaning the semiconductor substrate onto which a pattern has been formed with a cleaning solution, (2) substituting the cleaning solution with a composition solution containing a resin (A) which is decomposed by either or both of an acid and heat, and (3) decomposing and removing the resin (A) by either or both of an acid and heat. There can be provided a method for cleaning and drying a semiconductor substrate in which pattern falling or collapse occurring at the time of drying the cleaning solution after cleaning the substrate can be suppressed, and the cleaning solution can be efficiently removed, without using a specific apparatus which handles a supercritical state cleaning solution.

主权项

1. A method for cleaning and drying a semiconductor substrate in which a semiconductor substrate onto which a pattern has been formed is cleaned and dried, which comprises steps of
(1) cleaning with a cleaning solution the semiconductor substrate onto which a pattern has been formed, (2) drying the cleaned semiconductor substrate, wherein this step (2) includes stages (2-1) and (2-2):
(2-1) substituting the cleaning solution with a composition solution containing a resin (A) which is decomposed by either or both of an acid and heat, and(2-2) decomposing and removing the resin (A) by either or both of an acid and heat.