| 摘要 |
The present invention relates to a method of manufacturing an SOI wafer, in which the surface of a bond wafer into which ions have been implanted is bonded to the surface of a base wafer, with the interposition of a silicon dioxide film formed on the surface of the base wafer, after which peeling heat treatment is performed to peel off the bond wafer to yield an SOI wafer which is then subjected to planarizing heat treatment in an atmosphere containing argon gas, wherein a process is performed after the peeling heat treatment, without the inclusion of another heat treatment process, to remove any silicon flakes that are present on the silicon dioxide film in a terraced portion of the SOI wafer, after which the planarizing heat treatment is performed in an atmosphere containing argon gas. It is thus possible to provide a method of manufacturing a bonded wafer with which, when the peeled surface of an SOI wafer having an oxide film on a terraced portion thereof, fabricated by performing peeling heat treatment using ion implantation peeling, is subjected to planarizing heat treatment in an atmosphere containing argon gas, it is possible to planarize the peeled surface without forming unnecessary indentations in the terraced portion. |
