| 摘要 |
PROBLEM TO BE SOLVED: To provide an equipment and method for forming a doped metal film on an electroconductive substrate. SOLUTION: A depositing process comprises depositing at first a phosphorous doped seed layer on the electroconductive substrate, and then depositing an electroconductive metal layer on the phosphorous doped seed layer to form an electroconductive film. The other process for treating the substrate comprises depositing a dielectric layer on the substrate, etching the dielectric layer to form a feature, depositing an electroconductive barrier layer in the feature, depositing a phosphorous doped seed layer on the electroconductive barrier layer, and depositing an electroconductive metal layer on the phosphorous doped seed layer. The equipment includes a soluble anode provided with phosphorous doped materials in surroundings of itself through which electrolyte flows, in order to deposit a phosphorous doped film like a seed layer in an electrochemical depositing process. |
