发明名称 Positive photoresist composition
摘要 Provided is a positive photoresist composition which comprises (A) a resin which contains a repeating unit represented by formula (I) shown below and a repeating unit represented by formula (II) shown below and whose solubility in an alkaline developing solution increases by the action of an acid and (B) a compound which generates an acid upon irradiation with an actinic ray or radiation, wherein R1, R2 and R3 each independently represents an alkyl group, a haloalkyl group, a halogen atom, an alkoxy group, a trialkylsilyl group or a trialkylsilyloxy group; and n represents 0 or 1, wherein M represents an atomic group necessary for forming an alicyclic structure, which may be substituted, together with the connected two carbon atoms (C-C); and R11 and R12 each independently represents a hydrogen atom, a cyano group, a halogen atom or an alkyl group which may be substituted.
申请公布号 US2001041303(A1) 申请公布日期 2001.11.15
申请号 US20010789823 申请日期 2001.02.22
申请人 SATO KENICHIRO 发明人 SATO KENICHIRO
分类号 G03F7/039;C08F222/00;C08F222/06;C08F230/08;C08F232/08;C08K5/00;C08L35/00;C08L35/02;C08L43/04;C08L45/00;G03F7/004;G03F7/075;H01L21/027;(IPC1-7):G03F7/004 主分类号 G03F7/039
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