发明名称 Silicon-based, broadband, waveguide-integrated electro-optical switch
摘要 An electro-optical switch or router includes a semiconductor oxide substrate and first, second, and third semiconductor waveguides disposed on the semiconductor oxide substrate. The third waveguide includes a transparent conducting oxide layer, an oxide layer, a metal layer, and first and second electrodes coupled to the third waveguide. The electrodes are configured to bias and unbiased the third waveguide to effect optical switching in the electro-optical switch. The oxide layer is disposed between the transparent conducting oxide layer and the metal layer. The switch may further include a semiconductor layer disposed under the transparent conducting oxide layer between the transparent conducting oxide layer and the semiconductor oxide substrate. The first electrode may be coupled to the transparent conducting oxide layer, and the second electrode may be coupled to the metal layer.
申请公布号 US9529158(B2) 申请公布日期 2016.12.27
申请号 US201414528392 申请日期 2014.10.30
申请人 The George Washington University 发明人 Sorger Volker J.;Ye Chenran;Liu Ke
分类号 G02F1/035;G02B6/35;G02B6/125;G02F1/00 主分类号 G02F1/035
代理机构 Blank Rome LLP 代理人 Blank Rome LLP
主权项 1. An electro-optical switch comprising: a low dielectric layer serving as a substrate; a first high dielectric waveguide disposed on the low dielectric layer; a second waveguide disposed on the low dielectric layer; and a third waveguide disposed on the low dielectric layer, the third waveguide comprising: a transparent conducting oxide layer;a low dielectric layer;a metal layer; and a pair of electrodes coupled to the third waveguide and configured to bias the third waveguide to effect optical switching in the electro-optical switch.
地址 Washington DC US