发明名称 |
CMOS SENSOR WITH SHALLOW AND DEEP REGIONS |
摘要 |
A CMOS sensor. The CMOS sensor comprises a substrate, a gate electrode formed on the substrate, a source/drain region formed in the substrate on one side of the gate electrode, and a sensor region formed in the substrate on another side of the gate electrode. The impurity in the source/drain region is arsenic. The source/drain further comprises a lightly doped drain region. The sensor region comprises a first doped region and a second doped region which together have a dentoid profile. The impurity in the first doped region and the second doped region is phosphorus.
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申请公布号 |
US2001045584(A1) |
申请公布日期 |
2001.11.29 |
申请号 |
US19990324555 |
申请日期 |
1999.06.02 |
申请人 |
CHIEN CHENG-HUNG;LEE CHIH-HUA |
发明人 |
CHIEN CHENG-HUNG;LEE CHIH-HUA |
分类号 |
H01L27/146;H01L31/113;(IPC1-7):H01L31/113;H01L31/062;H01L29/768;H01L27/148 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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