| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which the characteristics, such as breakdown voltage, leakage current, etc., of a semiconductor device can be prevented from being deteriorated by the moisture entering into the device from a passivation film when a high voltage is applied between the source and drain of the device. SOLUTION: The method of manufacturing semiconductor device comprises a step of forming a plasma TEOS oxide film 12 as a second insulating film on a semiconductor substrate 1 provided with an interlayer insulating film 9 formed as a first insulating film, a source electrode 10, and a drain electrode 11, a step of etching back the TEOS oxide film 12 so that the film 12 may be left in spacer-like states in its lower step sections, and a step of forming a plasma nitride film 13 composed of the passivation film on the oxide film 12 as a third insulating film. |
