Device for producing and processing semiconductor substrates

摘要

The device for producing and processing silicon carbide semiconductor substrates at a high temperature has a susceptor, on which the semiconductor substrates rest, so that there is good thermal contact between the semiconductor substrates and the susceptor. To ensure that there is no contamination of the component during the production process, the surface of the susceptor is covered with cover plates each formed with a cutout for a semiconductor substrate. The surface of the susceptor is substantially completely covered by the cover plates and the semiconductor substrates.