ROW DECODING CIRCUIT OF NOR TYPE FLASH MEMORY DEVICE

摘要

PURPOSE: A row decoding circuit of a NOR type flash memory device is provided, which reduces an occupation area of the circuit. CONSTITUTION: Each of the first and the second local decoder circuit(140a,140b) includes a plurality of depletion mode NMOS transistors(M0-Mn), and each transistor corresponds to local word lines(WL0-WLn) of a corresponding sector. The depletion mode transistors of the first local decoder circuit have gates connected to a selection signal or a control signal(SWSa) supplied from the first sector selection circuit(160a) in common. Also, the depletion mode transistors of the second local decoder circuit have gates connected to a selection signal or a control signal(SWSb) supplied from the second sector selection circuit(160b) in common.