| 摘要 |
PURPOSE: A composition for chemical mechanical polishing(CMP) is provided, which reduces the production of micro scratch, improves the flatness of the surface of polished material and is used as a polishing agent for a semiconductor wafer. CONSTITUTION: The composition comprises 100 parts by weight of a mixture consisting of 0.1-50 wt% of metal oxide and 50-99.9 wt% of deionized water; and 0.001-10 parts by weight of a pyridine compound. Preferably the metal oxide is selected from the group consisting of silica, alumina, CeO2, ZrO2 and TiO2; the size of primary particle of the metal oxide is 10-100 nm; and the size of secondary particle of the metal oxide is 50-250 nm. The pyridine compound is selected from the group consisting of pyridine-4-methanol, pyridine-N-oxide, pyridine-3-sulfonic acid, pyridine-2-carboxaldehyde, pyridine-3-carboxaldehyde, pyridine-3-carboxylic acid, and pyridine-4-carboxylic acid. |
