| 摘要 |
PURPOSE: A composition for chemical mechanical polishing(CMP) is provided, which reduces the production of large particles in slurry, thereby minimizing the production of micro scratch and improving the uniformity of the surface of polished material, and is used as a polishing agent for a semiconductor wafer. CONSTITUTION: The composition comprises 100 parts by weight of a mixture consisting of 0.1-50 wt% of metal oxide and 50-99.9 wt% of deionized water; and 0.001-3 parts by weight of at least one compound selected from a benzoquinone compound represented by the formula 1 and a quebrachitol compound represented by the formula 2, wherein n is an integer of 0-5. Preferably the metal oxide is selected from the group consisting of silica, alumina, CeO2, ZrO2 and TiO2. The particle size of the metal oxide is 10-100 nm, and the average size of secondary particles of the metal oxide is 50-500 nm. |
