| 摘要 |
PURPOSE: A method for etching a semiconductor device is provided to improve efficiency of an etching apparatus and to simplify a manufacturing process, by sequentially etching a conductive layer and an insulation layer in the apparatus for etching the conductive layer. CONSTITUTION: The semiconductor device has a stacked structure of the first conductive layer(12), the first insulation layer(14), the second insulation layer(16) and the second conductive layer(18). The first insulation layer, the second insulation layer and the second conductive layer are sequentially etched in the apparatus for etching the conductive layer. Etch gas used in etching the first and second insulation layers is CF4 gas.
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