METHOD FOR RINSING HIGH INTEGRATED SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for rinsing a high integrated semiconductor device is provided to decrease surface adhesion of chemicals and particles absorbed to the surface of a semiconductor substrate, by using isopropyl alcohol(IPA) vapor or mixed vapor of IPA and water vapor to perform a pre-treatment process regarding a wafer, by performing a deionized(DI) water shower process and by performing a nitrogen gas bubbling process. CONSTITUTION: The wafer is inserted into a quick dump rinse(QDR) bath containing DI water. A bubbling process is performed regarding the nitrogen gas in the QDR bath. The DI water in the QDR bath is exhausted. Vapor is supplied to the wafer left in the QDR bath to improve rinsing capacity. The wafer is showered by using DI water. The QDR bath is filled with DI water by the shower process. The nitrogen gas bubbling process is performed regarding the QDR bath.