| 发明名称 |
Microelectronic air-gap structures and methods of forming the same |
| 摘要 |
An improved microelectronic structure is disclosed. The improved structure includes an air-gap region formed by removing an insulating material through an aperture residing in a mask.
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| 申请公布号 |
US2002016058(A1) |
申请公布日期 |
2002.02.07 |
| 申请号 |
US20010967115 |
申请日期 |
2001.09.28 |
| 申请人 |
ZHAO BIN |
发明人 |
ZHAO BIN |
| 分类号 |
H01L21/311;H01L21/764;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/00;H01L21/265;H01L21/44;H01L21/476;H01L29/80;H01L31/112 |
主分类号 |
H01L21/311 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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