| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device by using a crystalline silicon film having superior electrical characteristics. SOLUTION: In a semiconductor device, a crystalline silicon film is grown horizontally, by implanting an element for aiding crystallization of amorphous silicon film. By using a crystalline silicon film formed on a glass substrate, an active region is formed. The crystalline silicon film is grown almost in parallel in crystallization on the surface of the glass substrate, and the growing direction of the crystal coincides with the axial [111] direction of the silicon crystal.
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