发明名称 METHOD OF FORMING WIRING HAVING CHROMIUM LAYER
摘要 <p>PROBLEM TO BE SOLVED: To make the surface deterioration layer, etc., of a resist pattern which occurs when forming chrominum wiring by wet etching removable without using any exclusively used device. SOLUTION: The chromium wiring is formed by carrying an object having the resist pattern on a chromium layer formed on a substrate in a chromium wet-etching section 23 and wet-etching the chromium layer with a mixed acid containing secondary ammonium cerium nitrate and perchloric acid by using the resist pattern as a mask. Then the object is carried in a post-treating section 24 and the surface deterioration layer, etc., of the resist pattern is removed by performing post treatment on the object by using a mixed acid containing nitric acid, acetic acid, and phosphoric acid. After post treatment, the object is carried in a resist stripping-off section 33 and the resist pattern in stripped off by performing wet-etching by using a resist stripper containing amine.</p>
申请公布号 JP2002064101(A) 申请公布日期 2002.02.28
申请号 JP20000249216 申请日期 2000.08.21
申请人 CASIO COMPUT CO LTD 发明人 KOSHIZUKA YASUO
分类号 G02F1/136;G02F1/1368;H01L21/308;H01L21/3205;H01L21/3213;H01L21/336;H01L23/52;H01L29/786;(IPC1-7):H01L21/321;H01L21/320 主分类号 G02F1/136
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